Prof. Michele Goano

Argomenti del programma: a.1. Large- and small-signal models of diodes, BJTs and MOS transistors. Equivalent circuits for the determination of the bias point of bipolar and MOS transistor. Definition and calculation of the sensitivity of the bias point (1 ECTS) a.2. BJT and MOS amplifiers. Load line, safe operating area. Fundamental topologies of single-stage amplifiers, voltage and current gains, input and output impedances (1 ECTS) a.3.

Argomenti del programma: 1. Semiclassical models for carrier transport in semiconductors: from the Boltzmann transport equation (BTE) to the hydrodynamic, energy-transport and drift-diffusion models. Numerical issues and fundamental limitations in the simulation of (opto)electronic devices with semiclassical models based on systems of partial differential equations (1 ECTS) 2.

Argomenti del programma: 1. Semiclassical models for carrier transport in semiconductors: from the Boltzmann transport equation (BTE) to the hydrodynamic, energy-transport and drift-diffusion models. Numerical issues and fundamental limitations in the simulation of (opto)electronic devices with semiclassical models based on systems of partial differential equations (1 ECTS) 2.